Sensitizer for EUV Chemically Amplified Resist: Metal versus Halogen

Calibration of Chemically Amplified Resist Models

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...

Report on EUV resist and process limitations

EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...

Determining Free Volume Changes During the PEB and PAB of a Chemically Amplified Resist

Chemically amplified resists provide some trade-off between resolution and amplification. While it is necessary for a single photogenerated acid to be mobile enough to cause several deprotection reactions, this inevitably leads to some linewidth spread. An acid molecule mobile enough to travel to several reaction sites is also mobile enough to move into unexposed regions of the resist. In order...

Recent Progress of EUV Resist Technology in EIDEC

EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV ...